表面等离子体的纵向耦合调控说明书及开题
表面等离子体的纵向耦合调控说明书及开题,表面,等离子体,纵向,耦合,调控,说明书,仿单,开题
综述:等离子体纳米光刻Zhihua Xie &Weixing Yu & Taisheng Wang &Hongxin Zhang & Yongqi Fu & Hua Liu & Fengyou Li &Zhenwu Lu & Qiang Sun接收于2011年1月9日/承认于2011年5月23日/网上出版于2011年5月31日斯普林格科学+商业传媒,LLC2011摘要表面等离子体激元(SPPs)在最近十年间引起了极大的关注,并且由于不受衍射极限限制的能力而被成功应用到纳米级光刻中。这篇文章回顾了被认为是下一代纳米光刻最卓越的技术之一的等离子体纳米光刻近期的发展。纳米光刻实验建立在SPPs效应的基础上。从细节回顾三种类型的等离子体纳米光刻措施:接触式纳米光刻,透镜成像式纳米光刻,和直写式纳米光刻,并且相应的分析对比它们的优缺点。最后,暗示了等离子体纳米光刻的发展趋势。Z. Xie : T. Wang : H. Zhang : H. Liu : F. Li : Z. Lu : Q. Sun光电子工程中心,长春光学精密机械与物理研究所,中国科学院,长春,吉林130033,中国Z. Xie : T. Wang中国科学院研究生院,北京100039, 中国W. Yu (*)应用光学国家重点实验室,长春光学精密机械与物理研究所,中国科学院,长春,吉林130033,中国邮箱:yuwxciomp.ac.cnY. Fu (*)物理电子学院,电子科技大学,成都610054,四川省,中国邮箱:yqfuuestc.edu.cn关键字等离子体纳米光刻,接触式纳米光刻,透镜成像式光刻介绍光刻技术和电子束蚀刻技术相比,由于它的高生产量和更有效率的成本,纵观最近几十年的光写技术,被认作是半导体工业制作技术的主流。更高的产量,更低的成本,更好的解决方案,以及对系统结构的简化是我们通常追求的目标。之前已开发了多种纳米光刻技术,比如电子束蚀刻,纳米压印光刻,浸润笔光刻等等。对于电子束蚀刻,低于10nm的最小分辨率已经被展示了,但此项技术的产量很低,以至于它主要用于遮片的制作而非大规模生产。随着低于10nm工艺和高产量的解决,纳米压印光刻被应用于大规模生产。然而,作为一种替代措施,纳米压印光刻仍然存在一些问题。其中一个问题就是在压印过后的剩余抗蚀层可能会限制它的应用。浸润笔光刻和电子束光刻一样有低产量的缺点。除了上述技术,光子光刻也是纳米光刻的一项重要技术。纳米光刻中传统的光子光刻包括光学投影光刻(193浸润式光刻),X射线光刻,超紫外光刻,波带片阵列光刻等等。光学投影光刻由于它的高产量主要应用于工业。但是随着更小特征尺寸的要求,传统的光学投影光刻不可以解决由于衍射极限限制而导致的问题。一般而言,提高光学投影光刻的分辨率是通过减小照射光波长或增大数值孔径来实现的,这也导致很多复杂的问题和增加的成本。X射线光刻可以有一个高产量,并且展示了一种50nm级别的分辨率,但X射线光刻系统格外的昂贵,这就促使我们寻找一种价格低廉的光刻系统来替代它。超紫外光刻同样可以取得高产量,但光源的高成本以及光学陈列系统的复杂性限制了它在工业大规模生产上的应用。至于波带片阵列光刻,它是一种可以以相当快的速度显示任意模式的新型的原理性措施。然而,它的分辨率依然受衍射极限的限制。近场光学光刻提供了一种新的摆脱衍射极限限制并且实现不受理论限制的分辨率。最近,报道了很多不同类型的近场光刻。传统的近场光刻通过使用诸如光耦合薄膜或相移薄膜等特殊的薄膜已经实现了低于50nm级别的分辨率。但是近场光刻的一个最主要缺点就是光的透射比很低。对于薄膜上小于照射波长的孔径,因为绝大部分的光被衍射和反射,抵达抗蚀层的光便极少。这导致了曝光时间很长和照片对比度低。新近,基于表面等离子体激元(SPPs)理论发展的近场光学被用于进一步改善近场光刻分辨率的目的。表面等离子体(SPs)是存在于金属或电介质界面的聚集电子。SPs有它自己独特的色散关系,这种色散关系也决定了超越衍射极限的分辨率,它可以用等式(1)来表示 (1)其中,是真空中光的波长,和分别是电介质层和金属层的介电常数。从色散方程,我们可以得到表面等离子体的波长比真空中光波波长短,较短的波长对于超越衍射极限的分辨率起作用。表面等离子体以两种形式存在,传播形式和局域化形式。在光滑薄膜上,表面等离子体激元在金属介质表面以倏逝电磁波的形式传播,这是金属表面自由传导电子集体振荡的结果。通常,由于光波和等离子体波的动量不匹配,表面等离子体激元不易被激发。带有孔径排列和周期分布的金属薄膜可以补偿不匹配的动量进而激发表面等离子体激元。局域表面等离子体共振并非在水平面传播,而是限制了隔离纳米粒子附近表面的电磁场。对于单一的亚波长孔径,由于局域化表面等离子体的存在,传播可被增强。至于周期性的孔径阵列,传播的增强则是由局域化等离子体和表面等离子体的完整效应引起的。基于表面等离子体理论的光刻技术被称为等离子体光子光刻。对于等离子体光子光刻,由于透射比的增大,分辨率和对比度可被显著提高。最近,有很多基于表面等离子体的光刻实验。计算机数值仿真显示了使用365nm波长的照射光可以达到20nm的分辨率。看上去等离子体光子光刻拥有满足高分辨率的潜力。在这篇文章中,我们首先会回顾典型的等离子体光子光刻。然后,对比这些已经做成的实验,最后,提出了等离子体纳米光子光刻的发展趋势。等离子体纳米光刻一般的说,等离子体纳米光刻依照曝光措施可以被分成三种类型:接触式纳米光刻,平面透镜成像纳米光刻,和直写式纳米光刻。在接下来的章节,我们会把实验分成上述三种类型尽可能多的回顾等离子体纳米光刻。等离子体接触式光刻等离子体接触式光刻是一种为了提高亚波长成像质量的模式化的倏逝近场光学光刻。在此项措施中,源于金属薄膜的光刻胶暴露在表面等离子体激元下。由于表面等离子体激元仅在金属薄膜以下几十个纳米传播,薄膜和光刻胶的紧密接触就很有必要。使用此项技术付出了很多的努力。在2005年,Srituravanich et al.实验性的证明了通过在银薄膜使用平面孔径的方法把纳米光刻的半节距分辨率缩小到了60nm.光源是一个峰值辐射为365nm的过滤汞灯。原理图如图1a所示。薄膜由带有周期性分布的二维孔径的银薄膜层组成,银薄膜层上下为硅层和光刻胶层(折射率分别为1.48和1.57)。银层厚度为40nm,孔阵列周期为120nm,孔的直径为60nm。为了增加银层和硅层的粘附力,降低表面粗糙程度,银层和硅层中间有一个3nm厚的粘附层。通过这种结构,小特征尺寸可以以很小的表面粗糙度耦合到银层中,如图1b所示。 Fig. 1 a Schematic of lithography setup designed by Srituravanich et al. b The silver mask with hole array used in this experiment图1 a 由Srituravanich et al设计的光刻结构原理图 b 实验中带有孔径阵列的银层一层15nm厚光刻胶的垫层覆盖在银层上。负性光致抗蚀剂(SU-8)直接覆盖在隔离层上,并且聚合在薄膜上以消除光刻过程中薄膜和光刻胶之间的间隙差异。特征尺寸小至60nm(相当于)的二维孔径阵列可以通过暴露在照度为80mJ/cm2的光中获得,如图2所示。光刻胶的特征尺寸和薄膜上模式尺寸一样。因此,分辨率主要受薄膜分辨率限制。由于表面等离子体激元在这种情况下非常短的传播长度(20nm),模式保真度格外高。值得注意的是由于铝层可以在紫外范围激发等离子体激元,铝层也可以作为薄膜,Srituravanich et al已经成功的使用365nm波长的光源获得了170nm周期的低于100nm的点阵模式。但是,通过使用商业有限差异时域软件(微软制作)的计算仿真结果显示,在平面波(=365nm)照射下,通过银孔径阵列的电场传播在电场强度上有一个明显的增强,与通过铝孔径阵列对比,场的分布也被紧紧限制。因此,可以推断,在365nm波长的照射下,银层可以比铝层实现更好的模式。Shao et al.开发了一个与上述类似的表面等离子体辅助的纳米光刻系统,光源是紫外光源。光罩使用带有光栅模式和环状孔径的70nm钛合金制作。薄膜与光刻胶直接接触,没有分隔层。为了聚集光刻胶的光强以实现高强度的纳米级模式并吸收到达底片的光,在光刻胶和底片之间有一层80nm后的钛合金保护物。在这个实验中,孔径数量和周期都是影响光刻结果的关键因素。周期为400nm的光栅可以相当好的转移,并且在抗蚀层可以获得35nm高的模式。然而,拥有单一孔径模式不可以转移到抗蚀层,这也预示了薄膜的表现主要取决于薄膜上孔径的形状和孔径尺寸。Zayats和Smolyaninov提出一项实现单一亚波长孔径高透射比的措施。他们阐述了与均匀单一介质层金属薄膜相比,由于被周期性结构薄膜激发的光与等离子体的耦合,在多层金属介质上单一亚波长孔径中的光学传播可以被明显增强。 Fig. 2 AFM image of the exposure pattern. 图2 曝光模式的AFM照片与均匀薄膜上相同尺寸的孔径相比,这项举措把光学传播增加了两个数量级。此外,多层金属薄膜传统上可以通过成熟的薄膜积淀技术来实现。这项措施可以应用于光刻技术中而且可能导致一个更好的结果。光刻上的应用将会在实验上不断证明。类似的,光子光刻原理使用了一个设计的可以产生亚波长特征尺寸的多层金属电介质薄膜。一般而言,光刻胶中的模式构造原理与薄膜中一样。然而,大量的实验证明可以实现更小的特征尺寸,比如,一个周期为400nm的光栅薄膜结构,在光刻胶中可以构造67nm的光栅结构。昂贵金属中一系列孔径的利用说明了在表面等离子体的谐振激励下的传播增强,尽管空间分辨率某种程度上会因为系列孔径的周期而降低。最近的研究表明金属中陡峭脊状的孔径如蝴蝶结孔径或触角形,C形,H形孔径等等可能会实现一个更佳的结果。蝴蝶结状天线形孔径是一个重要的孔径类型,最初由Grober et al.设计并被应用于微波尺度的高传播效率的近场光学探针。后来,因为局域表面等离子体的谐振,增强强度的高限制热点在近场的蝴蝶结结构可以被观察到。由于蝴蝶结结构而增强的透射比已经被应用到很多领域,例如等离子体波导的高效率激发等等,最近,这也成功作为一种新奇的手段而被应用到纳米光刻中以提高分辨率。蝴蝶结形孔径与蝴蝶结形天线相对应,如图3所示。两种结构都由两臂组成,两个指向对方的锋利的尖端间形成了一个小间隙。仿真结果暗示了在505nm级别的共振,在蝴蝶结尖端的相应的场强是照射场的15000倍,这一点与蝴蝶结形天线相当。但真实的表现很大程度上受孔径尺寸,金属材质,波长,极化等其它因素的影响。一个有蝴蝶结形状孔径的薄膜可被应用于接触式光刻中,并且已经表现了良好的效果,Xu et al.最先把蝴蝶结形孔径应用到等离子体接触式光刻中,并且使用蝴蝶结形孔径解决了特征尺寸低于50nm的二维孔问题,带有30nm间隙的150nm厚的铝制薄膜的蝴蝶结形孔径覆盖在硅制基底上。铝由于它的小的趋肤深度和高反射率而被选择为薄膜材料。薄膜由355nm的半导体泵浦的固体激光器光束在垂直间隙方向极化。实验装置如图4所示。实验在等级为10的超净间内的手套箱内进行,以尽可能的降低污染并防止暴露在光刻胶中环境中光的影响。用一个3倍紫外物镜,激光束聚焦到一个薄膜层上直径为110m的光斑。激光的偏振光束被引导穿过蝶形孔的间隙。实验中使用了一个正性光致抗蚀剂(希普利S1805).由于孔径的深度和尺寸直接受曝光时间的影响,因此,曝光时间必须精确控制。曝光时间的控制通过使用毫秒级的电子开关来控制。结果,可以在正性光刻胶上在1.3s曝光时间内获得小至4050nm级别的超衍射极限的光刻。Fig. 3 Schematic of bowtie aperture (left) and antenna (right).图3 蝶形孔径(左)和天线(右)原理图Fig. 4 Schematic diagram of the experimental lithography system designed by Xu et al.图4 Xu et al.设计的实验光刻系统原理图总结在这篇文章中,我们回顾了三种类型的等离子体纳米光刻技术:接触式纳米光刻,透镜成像式纳米光刻,和直写式纳米光刻。对于这三种纳米光刻技术提供了一些实验和比较。通过上述分析,我们可以得出高分辨率是等离子体光刻的独特优势。等离子体光刻产量低,模式接替等问题则需要进一步的研究,进而实现真正地纳米工业化生产。总之,等离子体光刻是下一代纳米光刻中最有发展前景的技术,并且有实现大规模生产的潜力。参考用书1. 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