数控高压水射流切割机设计(含CAD图纸)
数控高压水射流切割机设计(含CAD图纸),数控,高压,水射流,切割机,设计,CAD,图纸
燕山大学毕业设计(论文)任务书学院:里仁学院 系级教学单位: 学号041101011225学生姓名李东专 业班 级机械制造课题题 目数控高压水射流切割机床设计来 源自选主要内容1. 机床的总体设计2. 数控加工平台(进给系统)设计3. 数控功能设计:一周内完成。4. 水射流切割装置的设计5. 过滤装置的设计基本要求1. A0图三张(包括CAD 图三张),A1图纸一张(零件图)2. 设计说明书约50页3. 翻译外文资料一篇参考资料1.机械设计手册第2卷(新版),王文斌,机械工业出版社2.特种加工,刘晋春 赵家齐等,机械工业出版社3.金属切学机床,戴曙,机械工业出版社4.马水仙。水射流切割装置。国外金属加工。2001年第2期等。周 次14周58周912周1316周1718周应完成的内容查找相关资料编写开题报告计算数据计算完成第一张A0图纸完成第二章AO图纸和部分第三张A0图纸完成第三张A0图纸和零件图检查答辩指导教师:王军(男)系级教单位审批:说明:如计算机输入,表题黑体小三号字,内容五号字。本任务书一式二份,教师、学生各执一份。附录1 英文翻译附录1 英文翻译水射流与激光结合加工在半导体中的应用P. Ogawa, D. Perrottet, F. Wagner, R. Housh, B. Richerzhagen* SA, Ch Synova. delaDentdOche, CH-1024 Ecublens,瑞士电子邮件: richerzhagensynova.ch摘要最近几年,半导体晶圆已经占据了市场的很大一部分,它在复合材料的生产中超过其他硅产品的知名度。由于这些III/V 半导体材料的加工工艺要求高,因此产生了许多与传统加工不同的加工工艺和方法。不同的切割方法之间存在着显著差异。在传统切割中, 由于存在严重的热损失,使工件的切口处产生结晶体。 现在,有了让人满意的解决方法-与激光微射流( lmj )这一成果 ,一个革命性耦合激光和水射流的技术。这是一种比其他加工方法更快捷和清洁的加工方法,并且能产生很高的加工精度。此外,它可以切割任意的形状,这在其他传统加工方法中是不可能的。最后,安全问题不应该忘记。事实上,由于融入了水射流,在加工过程的检测中没有发现产生有毒气体。关键词:激光切割,水射流引导激光,砷化镓,化合物半导体。1.导言硅占半导体晶圆市场已经超过三十年。然而,持续的要求,更高的速度和增加小型化带动无线电和宽带通讯行业的发展,使III/V半导体材料,如砷化镓( GaAs )的和磷化铟( InP) 的需求量增大。事实上,这些材料的电学性比纯硅更具有优势,它们在高频率的运作,改善信号接收效果,更好的处理信号在拥挤的频带,和增大大的功率效率更有优势。根据“IC 的洞察”的市场研究(公司总部设在斯科茨代尔,亚利桑那州),在2002年占市场87 的份额的化合物半导体集成电路仍然主要是基于砷化镓。半导体市场已经把他们生产的产品定在这个方向。 “IC 的洞察”调查,在2002年到2007年化合物半导体每年平均的增长率为22%。相较之下,比同一时期的IC市场增长率为10 。在2000年该化合物半导体IC市场的高峰24.2亿美元,但在2002年下跌至16.9亿美元。 “IC 的洞察”预测增长强劲,在随后的岁月,与不断扩大到2007年,当市场将会扩大一倍以上,达46.5亿美元。今天,砷化镓市场已不再被认为是为特定盈利市场。最重要的应用不光是无线通信业,砷化镓是揭示了它的潜力在光电电子应用在军事,医疗,特别是LED照明领域。标准的生产技术仍然需要变得更加适应这一新的高增长的市场。减少芯片尺寸低于500um的规定,使用更薄的晶圆比100um的,缩小晶圆厚度也有其优点,可以降低其温度梯度。由于砷化镓是非常脆弱,改善方法是用树脂叶片。这需要提高切削速度和质量。此外,考虑制造晶圆的切割过程是精密的,这需要使用新的切割方法,达到高生产率。此外,砷化镓的价格昂贵也是需要考虑的。另一个不如忽视的重要方面是:制造和加工的化合物半导体,尤其是砷化镓,对安全有严重的威胁。砷化镓气体有毒,是引起人类致癌物质。这些事实提出了很多的关注,从环境,健康和安全的立场。2 .比较不同的切割方法目前有三种加工方法,用来加工砷化镓晶圆,即砂轮切断,刨切,和激光引导水射流切割。由于砷化镓的特定属性,缺点不容忽视,当切割硅晶片,因为划片砷化镓在加工时有很多缺点。传统的切割方法在加工半导体时会遇到很多问题。激光引导水射流切割主要优势切割硅晶圆时的切缝质量高。如果是传统的切割方法的话,由于硅晶圆非常的脆,加工出高质量的切缝是很难实现的。刨切宽度较大的砷化镓时,加工面面要拓宽,从而减少芯片数量的百分之晶圆。此外,由于机械的限制,导致工件的边缘往往容易破碎,从而使该件无法使用。在一般情况下,要达到一个符合条件的切割质量,切削速度要在3到12mm/s之间,这主要取决于晶圆的厚度,从而大大减缓了整个加工效率。表1显示的是3种切割方法的比较。水射流切割可以在同样的毛配件中切削出更多的工件,既节约材料降低成本。在加工一个昂贵的复合材料,这是一个真正的优势。举例来说,晶圆并不总是沿内切线。这往往是晶圆破损的主要原因。这意味着,要清楚处理大量的废弃晶圆时间和精力。利用激光引导水射流,不需要将它与一个标准的激光看待,可以增加砷化镓晶圆的切削速度,提高切缝质量。此外,它可以切割任意形状,包括多项目晶圆,这在传统切割中是不可能的。3.水射流引导激光加工激光引导水射流采用了薄水射流作为一个引导件,以指导工件加工(参见图1 ) 。除了引导激光,水射流冷却作用正是它的优势所在,它可以降低切削时的温度,也就消除了材料的熔融。事实上,在激光引导水射流是一个低温切割系统,在任何切削过程中检测的工作的切削温度不会超过160 C的 2 。这种水射流很安全,在晶圆在切割中不存在由于机械和热而产生的损失(见图2 ) 。该水射流提供了一个不断切缝宽度等于直径的射流,因此,特别是对非常脆和难以加工材料如砷化镓 ,即使厚度小25 m也可加工, ( 25至75 m的根据该喷嘴直径) 。另一个明显的优势,这种水射流对于此特定的应用是当工件变薄时它的切削速度和质量会增加,而在传统切割中,这是刚好相反。薄砷化镓晶圆,可实现非常高切割速度。传统的激光切割砷化镓时产生大量的碎片,很难消除,甚至可以破坏附近的活性成分。在水射流切割中,这个问题已经克服。使用一种特殊的薄水膜,新技术的具体不断晶圆清洁和免费的粒子。由此产生的水平芯片的污染,比传统的切削方法要小得多。任意形状的切割,在薄晶圆加工中已变得日益重要,为各种应用在微电子学和医学,在其中的任意形状使用。传统技术不能提供所需的灵活性和两维自由度。图3介绍了水射流全方位的定向切割。左图的砷化镓晶圆厚175m,切缝宽75m的,所取得的速度15mm/s(点表面上是没有残留) 。该切削的晶圆(右侧)是250m厚,切削速度2mm/s 。4.安全关于安全问题,多次对水射流测试表明在切割过程中空气里没有发现存在砷化氢的气体,切割砷化镓晶圆 3 ,一个重要的差异,以传统激光切割为例(见表2 )这是不得不令人惊讶,因为激光引导水射流是水射流和再加上在一个很短激光脉冲(约450ns )相互作用的雷射光与物质。由于有水的存在,在切割时不会产生有毒气体,而是是有毒气体溶解到水中。因为废水中砷的浓度很高,所以废水应当适当的过滤或循环。与传统切割相比,激光引导水射流切割砷化镓不需要任何额外的保安系统。 5 .结论总括而言,较传统的切割方法,水射流切割展示了无可争议的优势。 100m厚的晶圆可以切割在六60mm/ s和卓越的品质是达成共识。甚至,尽管传统方法已有所改善所做,多年来,他们将很快取代晶圆变薄和聘用更多的成本和关键材料。参考 1 “2003年麦卡琳报告” ,新闻稿, IC 的洞察, 2003年。2 N. Dushkina, B. Richerzhagen: “划片砷化镓晶圆与 思诺瓦激光微-挑战,改善和安全3 N. Dushkina “安全切割砷化镓晶圆与雷射器” ,技术文件的工业标准结构 ,第一卷。 438 , 175-183 , 2003 。附录2 英文原文附录2 英文原文Chipping-free dicing of III/V semiconductor materials with the waterP. Ogawa, D. Perrottet, F. Wagner, R. Housh, B. Richerzhagen* Synova SA, Ch. De la Dent dOche, CH-1024 Ecublens, SwitzerlandE-mail: richerzhagensynova.chABSTRACTFor a few years now the semiconductor wafer market has turned a substantial part of its production towards compound materials, faster than the well-known silicon. The mechanical and chemical properties of these III/V semiconductor materials (of which the most used being gallium arsenide, GaAs) require new specialized technologies. In particular, the singulation process is proved to be delicate. Different dicing methods exist, but important differences in results can be observed. The saw creates consequent chipping as well as broken edges. Conventional lasers should be avoided because of important heat damages. The scribe and break method can create cracks that tend to break wafers. The most satisfying results are obtained with the Laser Microjet (LMJ), a revolutionary technology coupling a laser and a water jet. It is faster and cleaner than any other process, and generates an impressive kerf quality. Furthermore, it allows free-shape cutting, which is impossible with blades. At last, the safety question should not be forgotten. In fact, because of the waterjet, no toxic arsenic gas could be detected.Keywords: Laser cutting, Water jet guided laser, GaAs, Compound semiconductors, Chipping-free1. INTRODUCTIONSilicon has dominated the semiconductor wafer market for more than three decades. However, the continuing demands for higher speed and increasing miniaturization have driven the wireless and broadband communications industries to use the brittle and difficult-to-handle, but much faster (meaning higher carrier mobility), III/V semiconductor materials, such as gallium arsenide (GaAs) and indium phosphide (InP). Indeed, these materials electrical properties give them several performance advantages over pure Si, including high frequency operation, improved signal reception, better signal processing in congested frequency bands, and greater power efficiency. According to IC Insights, market research firms based in Scottsdale, Arizona, compound semiconductor ICs are still largely based on GaAs, which accounted for 87% of the market in 2002. Most of the big players in the semiconductor market have turned their production in this direction. IC Insights expects the compound semiconductor IC market to experience an average annual growth rate of 22% from 2002 through 2007. In comparison, the total IC market will grow at a rate of 10% over the same time period. The compound semiconductor IC market peaked at $2.42 billion in 2000, but fell to $1.69 billion in 2002. IC Insights forecasts strong growth in the following years, with a continual expansion through 2007, when the market will have more than doubled to $4.65 billion.The GaAs market is no longer considered a niche market. Today, if the most important application remains the wireless communication industry, GaAs is revealing its potential in opto-electronics for applications in the military, the medical and especially the LED lighting domains. Standard production technologies still need to become more adapted to this new high-growth market. Decreasing the chip size below 500m requires using wafers thinner than 100m; shrinking the wafers thickness also have the advantage of lowering its temperature gradient. The use of GaAs wafers,which might be as thin as 25m, creates problems when they reach the last level of the production chain chip singulation. Because GaAs is very brittle and fragile, even improved saw methods using resinoid blades do not provide the desired high cutting speed and yield. Furthermore, considering that dicing is the very last process of wafer manufacturing, which means that the wafer has the highest value at that stage, and the drive toward higher production volumes at lower costs, it is paramount to employ the dicing method that achieves the highest yield. It is also important to consider that although GaAss price is not as high as it used to be, it is still a costly material. Another important aspect must not be neglected: manufacturing and processing of compound semiconductors, especially GaAs, reveals serious industrial safety concerns because of the hazardous chemical compounds found in certain processes. Pure compound GaAs contains 51.8%wt arsenic. It is described as toxic by inhalation and a possible human carcinogen. These facts raise a lot of concerns from an environmental, health and safety standpoint.2. COMPARISON OF THE DIFFERENT DICING METHODSThere are currently three well-known methods to dice GaAs wafers, namely the abrasive saw, scribing and breaking, and laser LMJ dicing processes. Because of GaAss specific properties, disadvantages of certain methods that are tolerated when dicing Si wafers because it is a rather forgiving material become unacceptable disadvantages when dicing GaAs. Traditional sawing is the most common dicing technique used in the semiconductor industry in general. Its primary advantage on the Si wafer is the quality of the kerf. But the sawing process induces mechanical constraints that are critical in the case of GaAs. If chipping is acceptable for Si, it is not the case for this brittle compound. Chipping widths of GaAs being larger, the street has to be widened, thereby diminishing the number of chips per wafer. Also, because of the mechanical constraints induced by sawing, chips corners tend to break easily thus rendering the pieces unusable. In general, to achieve an acceptable cutting quality, saw speed has to be reduced to values ranging between 3 and 12mm/s, depending on the wafers thickness, thereby considerably slowing the whole process. Table 1 shows a comparison of three dicing methods.With the scribe and break method, street width can be reduced drastically, increasing the number of dies per wafer. This is a real advantage when processing an expensive compound material. However, automation is too low to ensure an acceptable yield. For example, wafers do not always break along the scribed line. This often results into total wafer breakage and loss. This means as well that the processing speed is slow, and a large amount of scrap wafers are required for qualifications.Use of the Laser Microjet, not to be confused with a standard laser, appreciably increases the speed and kerf quality of GaAs wafer dicing. Moreover, it allows free-shape cutting, including multi-project wafers, which is not possible with conventional sawing techniques.3. WATER-JET GUIDED LASER PROCESSINGThe Laser Microjet (LMJ) uses a thin water jet as a light-guide to guide the laser onto the work piece (see Fig.1). Apart from guiding the laser, the water jet cools the piece exactly at the place where it is being cut and heated, also removing the molten material. In fact, LMJ is a low-temperature laser dicing system since the measured temperature during any working conditions does not exceed 160C 2.The low-pressure jet also insures that no mechanical and no thermal damages are incurred by the wafer during dicing (see Fig.2). The LMJ is therefore particularly efficient on brittle and difficult to machine materials such as GaAs, even for thickness as small as 25m. Furthermore, the high laminarity of the water jet provides a constant kerf width equal to the diameter of the jet (25 to 75m according to the nozzle diameter). Another interesting advantage of the LMJ for this specific application is that its speed increases when samples become thinner, while in the case of sawing, it is just the opposite. For thin GaAs wafers, achievable LMJ cutting speeds are very high.Conventional laser ablation of GaAs creates a lot of debris, hard to remove, that can even damage nearby active components. With the Laser Microjet (LMJ) technology, this problem has been overcome. Using a special thin water film, a new technology specific to Synova SA and to the LMJ, keeps the wafer clean and free of particles. The resulting level of chip contamination is equivalent to conventional saw, but the cut is much faster.Free-shape cutting, also known as free-form or arbitrary cutting, of thin wafers has become increasingly important for various applications in microelectronics and medicine, in which chips with arbitrary shape are used. Conventional techniques cannot provide the required flexibility and two-dimensional freedom. Fig.3 presents omni-directional cutting with the LMJ. The GaAs wafer (on the left) was 178m thick, and for a kerf witdh of 75m, achieved speed was 15mm/s (the dots on the surface are not residues from the cutting process). The InP wafer (on the right) was 250m thick, and resulting speed was 2mm/s, single pass. Employing frequency doubled Nd:YAG lasers, the cutting speed could soon be improved.4. SAFETYRegarding safety issues, several tests have been performed with the LMJ. The most important result was that no arsine gas is detected in the air while cutting GaAs wafers 3., an important difference to classical laser cutting (see Table 2).This is not surprising since the laser beam is coupled in a water jet and laser pulses are very short (around 450ns). The time for interaction of the laser light with the material is therefore very short and immediately followed by the cooling effect of the water. Though, the concentration of Arsenic in the wastewater is high. Therefore, the wastewater should to be appropriately filtered or recycled. In brief, compared to sawing, GaAs dicing with the Laser Microjet does not require any additional security systems.5. CONCLUSIONTo conclude, the Laser Microjet shows indisputable advantages over the more traditional scribe and break and abrasive saw technologies for the dicing of GaAs wafers. 100m thick wafers can be cut at 60mm/s and outstanding quality is reached. Even although improvements have been done to the traditional methods over the years, they will soon be replaced as wafers become thinner and employ more costly and critical materials. Furthermore, GaAs is not the only material on which the LMJ has already showed industry-leading results.REFERENCES1“The McClean Report 2003”, Press Release, IC Insights, 2003.2 N. Dushkina, B. Richerzhagen: “Dicing of GaAs wafers with Synova Laser Microjet - Challenges, Improvements and SafetyIssues”, Technical Digest, ICALEO, 94, 2002.3 N. Dushkina, “Safely Dicing GaAs Wafers with Lasers”, Technical Papers of ISA, vol. 438, 175-183, 2003.附录3 开题报告一、综述本课题国内外研究动态,说明选题的依据和意义(宋体,小四号)1. 选题依据超高压水射流技术其实并非新近出现,早在1974年,美国的FLOW公司就首先将其应用于工业切割领域并使其商业化。2002年,美国FLOW公司将超高压水射流技术带入了一个革命性的阶段,发布了最高压力可达87,000psi的超高压水射流设备,大大提高了生产效率 的同时使用成本也较之以前下降40%。随着对水射流技术地不断研发、提升、应用,其发展和使用前景将无可限量。目前,国际上像美国、德国、前苏联、意大利都攻破了超高压水切割的技术,最高切割压力可达550MPa。中国开展这项工作的研究有近四十年的时间,机械部、航空航天部、国家船舶工业总公司都先后立项研究,但超高压水切割一直处在实验室阶段,尚未用于稳定的商业运行。国内其它企业也有生产水切割设备的厂家,实际运行压力仅在220MPa左右,属中低压水平。压力愈高,切割的工艺性愈好,切割速度愈快,尤其在厚板切割时,中低压(200MPa)的水切割机,不能保证被切割材料顶部和底部的切割曲线一致性,甚至切不透,切割速度很慢。2.选题意义较之激光、等离子、线切割等传统的切割方式,水射流切割技术确实有其独特、显著的优势:a.切割品质优异水射流是一种冷加工方式,水刀不磨损且半径很小,能加工具有锐边轮廓的小圆弧。加工本身无热量产生且加工力小,加工表面不会出现热影响区,自然切口处 材料的组织结构不会发生变化,无需二次加工,无裂缝、无毛边、无浮渣,因此其切割品质优良b.几乎没有材料和厚度的限制无论是金属类如普通钢板、不锈钢、铜、钛、铝合金等,或是非金属类如石材、陶瓷、玻璃、橡塑、纸张及复合材料,皆可适用。c.节省成本水切割所产生横向及纵向的作用力极小,不会产生热效应或变形或细微的裂缝,不需二次加工,既可钻孔亦可切割,降低了切割时间及制造成本。d.清洁环保无污染在切割过程中不产生弧光、灰尘及有毒气体,操作环境整洁,符合严格的环保要求。二、研究的基本内容,拟解决的主要问题:(宋体,小四号)通过查阅各种资料,初步确定本次毕业设计需要解决的主要问题有:机床的总体设计;数控加工平台(进给系统)的设计;数控系统功能设计;水射流切割装置的设计;过滤装置的设计等。三、研究步骤、方法及措施:(宋体,小四号)1. 机床的总体设计:数控水射流切割机床的基本理论、机床的布局形式等。2. 数控加工平台(进给系统)设计:滚珠丝杠选择、滚珠丝杠支承选择、选择伺服电机、伺服系统增益、精度验算。3. 数控系统功能设计: 4. 水射流切割装置设计:超高压水射流发生器、磨料混合和液流处理、喷嘴等。5. 过滤装置的设计:四、研究工作进度:(宋体,小四号)1 查找资料,编写开题报告:四周内完成2 机床的总体设计:两周半的时间完成3. 数控加工平台(进给系统)设计:三周半的时间完成4. 数控功能设计:一周内完成。5. 水射流切割装置的设计:两周内完成6. 过滤装置的设计:一周半的时间完成7. 整理检查毕业论文:一周半的时间完成五、主要参考文献:(宋体,五号)1. 徐博斌 何永义. 水射流切割机床数控系统的设计.机电一体化2000,006(004):P.39-422. 遇罗文. 高压水射流切割技术和前混切割设备.新技术新工艺1997,000(006):P.18-193. 陈明,侯健.超高压磨料射流切割喷嘴装置研制及其应用.机械科学与技术 1997,026(004):P.31-32,364.马水仙。水射流切割装置。国外金属加工。2001年第2期5网查资料:数控技术在超高压水射流切割机床中的应用(http:/articles.e-works.net.cn/445/Article39381.htm)超高压水射流技术原理的应用(http:/www.gzboao.cn/blog/post/chaogaoshuiyashuisheliujishu.html)超高压水切割技术起源及其发展评测(http:/hi.baidu.com/xiangmuziliao/blog/item/8f3849f4874380d8f2d385a1.html)水喷射加工(http:/mt.nstl.gov.cn/commchanne)3
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