半导体集成电路概述

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1、IC常用术语园片：硅片芯片(Chip,Die)：6、8：硅（园）片直径：1 25.4mm6150mm;8200mm;12300mm;亚微米1m的设计规范深亚微米=0.5 m的设计规范0.5 m、0.35 m 设计规范（最小特征尺寸）布线层数：金属（掺杂多晶硅）连线的层数。集成度：每个芯片上集成的晶体管数IC工艺常用术语净化级别：Class 1,Class 10,Class 10,000每立方米空气中含灰尘的个数去离子水氧化扩散注入光刻.生产工厂简介生产工厂简介PSIFab Two was completed January 2,1996 and is a State of the Art fa

2、cility.This 2,200 square foot facility was constructed using all the latest materials and technologies.In this set of cleanrooms we change the air 390 times per hour,if you do the math with ULPA filtration this is a Class One facility.We have had it tested and it does meet Class One parameters(witho

3、ut any people working in it).Since we are not making microprocessors here and we dont want to wear space suits,we run it as a class 10 fab.Even though it consistently runs well below Class Ten.Here in the Fab Two Photolithography area we see one of our 200mm.35 micron I-Line Steppers.this stepper ca

4、n image and align both 6&8 inch wafers.Another view of one of the Fab Two Photolithography areas.Here we see a technician loading 300mm wafers into the SemiTool.The wafers are in a 13 wafer Teflon cassette co-designed by Process Specialties and SemiTool in 1995.Again these are the worlds first 300mm

5、 wet process cassettes(that can be spin rinse dried).As we look in this window we see the Worlds First true 300mm production furnace.Our development and design of this tool began in 1992,it was installed in December of 1995 and became fully operational in January of 1996.Here we can see the loading

6、of 300mm wafers onto the Paddle.Process Specialties has developed the worlds first production 300mm Nitride system!We began processing 300mm LPCVD Silicon Nitride in May of 1997.2,500 additional square feet of State of the Art Class One Cleanroom is currently processing wafers!With increased 300mm&2

7、00mm processing capabilities including more PVD Metalization,300mm Wet processing/Cleaning capabilities and full wafer 300mm.35um Photolithography,all in a Class One enviroment.Currently our PS300A and PS300B diffusion tools are capable of running both 200mm&300mm wafers.We can even process the two

8、sizes in the same furnace load without suffering any uniformity problems!(Thermal Oxide Only)Accuracy in metrology is never an issue at Process Specialties.We use the most advanced robotic laser ellipsometers and other calibrated tools for precision thin film,resistivity,CD and step height measureme

9、nt.Including our new Nanometrics 8300 full wafer 300mm thin film measurement and mapping tool.We also use outside laboratories and our excellent working relationships with our Metrology tool customers,for additional correlation and calibration.One of two SEM Labs located in our facility.In this one

10、we are using a field emission tool for everything from looking at photoresist profiles and measuring CDs to double checking metal deposition thicknesses.At the helm,another one of our process engineers you may have spoken with Mark Hinkle.Here we are looking at the Incoming material disposition rack

11、s Above you are looking at a couple of views of the facilities on the west side of Fab One.Here you can see one of our 18.5 Meg/Ohm DI water systems and one of four 10,000 CFM air systems feeding this fab(left picture),as well as one of our waste air scrubber units(right picture).Both are inside the

12、 building for easier maintenance,longer life and better control.集成电路（集成电路（Integrated Circuit,IC）：半导体：半导体IC，膜，膜IC，混合，混合IC半导体半导体IC：指用半导体工艺把电路中的有源器件、无源元件及指用半导体工艺把电路中的有源器件、无源元件及互联布线等以相互不可分离的状态制作在半导体上，最后封装在互联布线等以相互不可分离的状态制作在半导体上，最后封装在一个管壳内，构成一个完整的、具有特定功能的电路。一个管壳内，构成一个完整的、具有特定功能的电路。半导体半导体IC双极双极ICMOSICBiCM

13、OSPMOS ICCMOS ICNMOS ICn集成电路工业发展的一个重要规律即所谓摩尔集成电路工业发展的一个重要规律即所谓摩尔定律。定律。Intel公司的创始人之一戈登公司的创始人之一戈登摩尔先生摩尔先生在在1965年年4月月19日发表于日发表于电子学杂志电子学杂志上上的文章中提出，集成电路的能力将每年翻一番的文章中提出，集成电路的能力将每年翻一番。1975年，他对此提法做了修正，称集成电年，他对此提法做了修正，称集成电路的能力将每两年翻一番。摩尔定律现在的表路的能力将每两年翻一番。摩尔定律现在的表达：在价格不变的情况下，集成电路芯片上的达：在价格不变的情况下，集成电路芯片上的晶体管数量每晶

14、体管数量每18个月翻一番，即每个月翻一番，即每3年乘以年乘以4。集成电路工业发展的另一些规律建立一个芯片集成电路工业发展的另一些规律建立一个芯片厂的造价也是每厂的造价也是每3年乘以年乘以4；线条宽度每；线条宽度每6年下年下降一半；芯片上每个器件的价格每年下降一半；芯片上每个器件的价格每年下30%40%。晶片直径的变化：晶片直径的变化：60年：年：0.5英寸英寸 65年：年：1英寸英寸 70年：年：2英寸英寸 75年：年：3英寸英寸 80年：年：4英寸英寸 90年：年：6英寸英寸 95年：年：8英寸（英寸（200mm）2000年：年：12英寸（英寸（300mm）Transistor Counts

15、1,000,000100,00010,0001,000101001197519801985 19901995 20002005 2010808680286i386i486PentiumPentium ProKPentium IIPentium IIICourtesy,IntelMoores law in Microprocessors40048008808080858086286386486Pentium procP60.0010.010.1110100100019701980199020002010YearTransistors(MT)2X growth in 1.96 years!Tran

16、sistors on Lead Microprocessors double every 2 yearsCourtesy,IntelDie Size Growth40048008808080858086286386486Pentium procP611010019701980199020002010YearDie size(mm)7%growth per year2X growth in 10 yearsDie size grows by 14%to satisfy Moores LawCourtesy,IntelFrequencyP6Pentium proc48638628680868085

17、8080800840040.111010010001000019701980199020002010YearFrequency(Mhz)Lead Microprocessors frequency doubles every 2 yearsDoubles every2 yearsCourtesy,IntelPower DissipationP6Pentium proc486386286808680858080800840040.1110100197119741978198519922000YearPower(Watts)Lead Microprocessors power continues to increaseCourtesy,Intel