常用红外光敏电阻参数

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1、相应曲线:硫化铅:101E1a11|T-IXI、i5 IL fFL1 1:.11 11:-VIriI1 IIL 11 1J ZjII1LW 2 M 4 Ll 6 W M口 5.7 护Wvele ngt h (Merons )Jso-WH- -uIj oJo-JJILJoo-LFtL 1Fh-1k-11IIIIIIII-t-i口6hjis)- -p-do(BKJOO口O匚iO O口OO O DK 1 1- _zcowruLdLIz i-SLC 153,5K E： ；-30,:,C 243，：bKWC:-1 96C 77QK D: +25,JC 298K硒化铅:1Z Z 30 5 0、0 =口 C

2、D Ul7 命Wavelengt h (Herons ) A ;-SOBC 1 3护K E: T 汨叱 7严KWCi-虻吒 243Qr 0:4-250 298frKM X 2 口 匚 i 口 O O O O O O Q0.01PbSe1 .pooo100Freque- nc y (Hz )T emperature (CenteqradeJD1i oJWJo-g1. 硫化铅光敏电阻系列:电气参数Test Conditions at 25C - TypicalA & AMB & BMc & cmD* (Pk.,600,1) x 1011.51.2.51.251.2Wavelength Cutoff

3、 Microns3.03.02.7Peak Wavelength Response Microns2.52.52.2Time Constant Microseconds300Resistance Megohms.2-2.0.22.0.510注:型号中的M为密封封装.活性区参数Code NumberActive AreaBias VoltageTypical VW1 ResponsivityPackage SizeInchesmmTypicalMaximum.25.010.2510201.0x106TO5 &TO46.5.020.520406.0x105TO5 &TO461.0401501003

4、.0x105TO5 &TO462.08021002001.5x105TO53.12031503001.0x105TO55.20052505006.0x104TO810.4001050010003.0x104TO3机械参数T046T05-0210-pU.ISSn0.160Ina n75-15JTO-8TO-310-.550 |0330|nr1 11-5 佃0 0.270 10.355iTTi 1ii.500 TYPE0-.290 DUL PIMCIRCLL典型应用电路:BIAS寺GNE宀-:DETECTORV-CYFICA. HETZCOR/PRl.ANlL.Z? 1-. CUiCUZT1-Si

5、gnal Out:、sifirwfcejnpSIUACOlJfiAT： 3YIN8 x 1010 NotePbSe D* 3 x 109 NoteSquare orrectangular geometry0-Pi tch down to 59 micronsPixels 256Thermoelec trically cooledTE Cooler Controller Operating temp. down to 253KOptical filtersLow cos tCus tom designsMultiplexingDC int egra tingDark curre ntsubtra

6、ctionSample rates fromSystem Requirements12 to 15VDCTE Cooler 5V 2 amps (typical)Amplifier Specifications100 Hz to 1.2 MHzIndependent or slave OutPut vo1 tage range up to 12VoperationCus tom int erfaces available參Output current 2-3 mAmp typical and up to 30 mAmp available參 Adjustable output gain ava

7、ilableInt egra tion ti mes from 0.05 msec to 0.66 sec.4. 硒化铅光敏电阻电气参数Test Conditions at 25C - TypicalF & FMFA & FAMFS & FSMD* (Pk.,1000,1) x 1091.0-3.03.0-6.06.0Wavelength Cut-off - Microns4.5 - 5.04.5 - 5.04.5 - 5.0Peak Wavelength Response - Microns3.8-4.33.8-4.33.8 - 4.3Time Constant - Microseconds

8、1 - 31 - 31 - 3Resistance - Megohms.1 - 4.1 - 4.1 - 4活性区参数Code NumberActive AreaBias VoltageTypical VW-1Package SizeInchesmmTypicalMaximum1.0401501006,000TO-5 &TO-462.08021002003,000TO-53.12031503002,000TO-55.20052505001,200TO-810.400105001000600TO-3-0210- rO.185-10.160I15-15JT046T051-0.2050-.550 |p

9、Ci1II1s-TO-80-.290 DUL PIMCIRCLLTO-3机械参数5. 电子冷却硒化铅光敏电阻电气参数Test Conditions at 25 CGG2G21*GS21*D* (Pk.,1000,1) x 101(.71.21.52.0Wavelength Cut-off - Microns5.25.35.45.4Peak Wavelength Response - Microns4.34.54.64.6Time Constant MicroSeconds10152020Resistance - Megohms.2 - 7.2 - 10.2 - 15.2 - 15Operati

10、ngTemperature - C20304545Cooler Power1.2V/1.8A1.3V/1.6A2.2V/1.2A2.2V/1.2ANOTE: 3-6 Stage Thermoelectric Coolers and L2N Dewars available. Please contact us for further details.*TO-8, TO-66 and TO-3 packages only.活性区参数Code NumberActiveAreaBias VoltageTypicalResponsiVW1HtyPackage SizeInchesmmTypicalMa

11、ximum2030451.04015010090001300016000TO5378662.08021002005000800011000TO5378663.1203150300300050006500TO5378665.2005250500200030003500TO86610.400105001000100015001800TO3机械参数一 O.3W 0.325 m rti11-tEJ-maTO-5TO-37I 0-6&6. 硒化铅线阵主要性能:ArrayPbS Array 1-3 micronsPbSe Array 1-5 micronsPbS D* 8 x 1010 NotePbSe

12、D* 3 x 109 NoteSquare orrectangular geometryPi tch down to 59 micronsPixels 256Thermoelec trically cooled0TE Cooler Cont rollerOperating temp. down to 253KOptical filtersLow cos tCus tom designsMultiplexing0-DC int egra ting Dark curre ntsubtraction Sample rates fromSystem Requirements12 to 15VDCTE

13、Cooler 5V 2 amps (typical)Amplifier Specifications100 Hz to 1.2 MHzIndependent or slave Output vo1 tage range up to 12Voperation0Cus tom int erfaces available參Output current 2-3 mAmp typical and up to 30 mAmp available Adjustable output gain availableInt egra tion ti mesfrom 0.05 msec to0.66 sec.Not

14、e: These D* values are for unmultiplexed arrays. D* is affected by sample rates, int egra tion ti mes, etc.7. InGaAs PIN光电二极管探测器InGaAs PIN Photodiode Detectors RT 非致冷型主要性能：低暗电流,低电容，高响应.Mesa结构，无信号时不导电.适合于DC - 3GHz,以及光纤应用.Part #DiametermmResp. A/W 1.3umResp. A/W 1.55umDark Current nACutoff Freq.MHzCap

15、. pfShuntRes MQPeak D* cm*Hz/WNEP W/Hz%I5-.04-46.040.85.90.0753000.69000101210121012101210121012101210121012101210-12TOB_LiS t olt. pacltag J_ ：,g av & i lit 1 u . Filners avallcvbj.InG aAs PJN Photodiode SpiralSensitivity片瑚段聲引LOOa .90血口07BXQ0.50Q4Q0,3fl0 2Q0 IQa.oa口百LOG?3.-509S.DOQLavele-ii ntfilmkcronEt文档可能无法思考全面，请浏览后下载，另外祝您生活愉快，工作顺利，万事如意